{"id":362650,"date":"2024-10-20T01:41:30","date_gmt":"2024-10-20T01:41:30","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-iec-60749-182019-tc-2\/"},"modified":"2024-10-26T02:40:05","modified_gmt":"2024-10-26T02:40:05","slug":"bs-en-iec-60749-182019-tc-2","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-iec-60749-182019-tc-2\/","title":{"rendered":"BS EN IEC 60749-18:2019 – TC"},"content":{"rendered":"

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV<\/span> which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: – updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; – addition of a Bibliography, which includes ASTM standards relevant to this test method.<\/p>\n

PDF Catalog<\/h4>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
1<\/td>\ncompares BS EN IEC 60749\u201118:2019 <\/td>\n<\/tr>\n
2<\/td>\nTRACKED CHANGES
Text example 1 \u2014 indicates added text (in green) <\/td>\n<\/tr>\n
3<\/td>\nCross-references
Compliance with a British Standard does not of itselfcannot confer immunity from legal obligations. <\/td>\n<\/tr>\n
4<\/td>\nAmendments\/corrigenda issued since publication <\/td>\n<\/tr>\n
5<\/td>\nSemiconductor devices – Mechanical and climatic test methods – Part 18: Ionizing radiation (total dose) <\/td>\n<\/tr>\n
9<\/td>\nINTERNATIONAL ELECTROTECHNICAL COMMISSION
FOREWORD <\/td>\n<\/tr>\n
11<\/td>\nSEMICONDUCTOR DEVICES \u2013
MECHANICAL AND CLIMATIC TEST METHODS \u2013
1 Scope
2 Normative references
2.13.1 <\/td>\n<\/tr>\n
12<\/td>\n2.23.2
3.3
2.33.4
2.43.5
2.53.6
2.63.7
3.8
3.9
3.10
34 Test apparatus
4.1 Choice of apparatus <\/td>\n<\/tr>\n
13<\/td>\n3.14.2 Radiation source
3.24.3 Dosimetry system
3.34.4 Electrical test instruments
3.44.5 Test circuit board(s)
3.54.6 Cabling
3.64.7 Interconnect or switching system <\/td>\n<\/tr>\n
14<\/td>\n3.74.8 Environmental chamber
4.9 Irradiation temperature chamber
45 Procedure
5.1 Test plan
4.15.2 Sample selection and handling
4.25.3 Burn-in
4.35.4 Dosimetry measurements <\/td>\n<\/tr>\n
15<\/td>\n4.45.5 Lead\/aluminium (Pb\/Al) container
4.55.6 Radiation level(s)
4.6 Radiation dose rate
5.7 Radiation dose rate
5.7.1 Radiation dose rate determination
4.6.15.7.2 Condition A
4.6.25.7.3 Condition B
4.6.35.7.4 Condition C <\/td>\n<\/tr>\n
16<\/td>\n5.8.1 Room temperature radiation
5.8.2 Elevated temperature irradiation
5.8.3 Cryogenic temperature irradiation
4.85.9 Electrical performance measurements <\/td>\n<\/tr>\n
17<\/td>\n4.95.10 Test conditions
5.10.1 Choice of test conditions
4.9.15.10.2 In-flux testing
4.9.25.10.3 Remote testing
4.9.35.10.4 Bias and loading conditions
4.105.11 Post-irradiation procedure <\/td>\n<\/tr>\n
18<\/td>\n4.115.12 Extended room temperature annealannealing test
5.12.1 Choice of annealing test
4.11.15.12.2 Need to perform an extended room temperature annealannealing test <\/td>\n<\/tr>\n
19<\/td>\n4.11.25.12.3 Extended room temperature annealannealing test procedure
5.13 MOS accelerated annealing test
4.12.15.13.2 Need to perform accelerated annealing test <\/td>\n<\/tr>\n
20<\/td>\n4.12.25.13.3 Accelerated annealing test procedure <\/td>\n<\/tr>\n
21<\/td>\n5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with intended application dose rates less than 0,5 Gy(Si)\/s
5.14.1 Need to perform ELDRS testing
5.14.2 Determination of whether a part exhibits ELDRS
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance testing <\/td>\n<\/tr>\n
22<\/td>\n5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal devices
4.135.15 Test report <\/td>\n<\/tr>\n
23<\/td>\n56 Summary <\/td>\n<\/tr>\n
25<\/td>\nFigure 1 \u2013 Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices <\/td>\n<\/tr>\n
26<\/td>\nFigure 2 \u2013 Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear or mixed-signal devices <\/td>\n<\/tr>\n
27<\/td>\nBibliography <\/td>\n<\/tr>\n
30<\/td>\nundefined <\/td>\n<\/tr>\n
33<\/td>\nEnglish
CONTENTS <\/td>\n<\/tr>\n
35<\/td>\nFOREWORD <\/td>\n<\/tr>\n
37<\/td>\n1 Scope
2 Normative references
3 Terms and definitions <\/td>\n<\/tr>\n
39<\/td>\n4 Test apparatus
4.1 Choice of apparatus
4.2 Radiation source
4.3 Dosimetry system
4.4 Electrical test instruments
4.5 Test circuit board(s) <\/td>\n<\/tr>\n
40<\/td>\n4.6 Cabling
4.7 Interconnect or switching system
4.8 Environmental chamber
4.9 Irradiation temperature chamber
5 Procedure
5.1 Test plan
5.2 Sample selection and handling <\/td>\n<\/tr>\n
41<\/td>\n5.3 Burn-in
5.4 Dosimetry measurements
5.5 Lead\/aluminium (Pb\/Al) container
5.6 Radiation level(s)
5.7 Radiation dose rate
5.7.1 Radiation dose rate determination <\/td>\n<\/tr>\n
42<\/td>\n5.7.2 Condition A
5.7.3 Condition B
5.7.4 Condition C
5.7.5 Condition D
5.7.6 Condition E
5.8 Temperature requirements
5.8.1 Room temperature radiation
5.8.2 Elevated temperature irradiation <\/td>\n<\/tr>\n
43<\/td>\n5.8.3 Cryogenic temperature irradiation
5.9 Electrical performance measurements
5.10 Test conditions
5.10.1 Choice of test conditions
5.10.2 In-flux testing
5.10.3 Remote testing <\/td>\n<\/tr>\n
44<\/td>\n5.10.4 Bias and loading conditions
5.11 Post-irradiation procedure <\/td>\n<\/tr>\n
45<\/td>\n5.12 Extended room temperature annealing test
5.12.1 Choice of annealing test
5.12.2 Need to perform an extended room temperature annealing test
5.12.3 Extended room temperature annealing test procedure <\/td>\n<\/tr>\n
46<\/td>\n5.13 MOS accelerated annealing test
5.13.1 Choice of MOS accelerated annealing test
5.13.2 Need to perform accelerated annealing test <\/td>\n<\/tr>\n
47<\/td>\n5.13.3 Accelerated annealing test procedure
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with intended application dose rates less than 0,5 Gy(Si)\/s
5.14.1 Need to perform ELDRS testing <\/td>\n<\/tr>\n
48<\/td>\n5.14.2 Determination of whether a part exhibits ELDRS
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance testing <\/td>\n<\/tr>\n
49<\/td>\n5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal devices
5.15 Test report
6 Summary <\/td>\n<\/tr>\n
50<\/td>\nFigure 1 \u2013 Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices <\/td>\n<\/tr>\n
51<\/td>\nFigure 2 \u2013 Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear or mixed-signal devices <\/td>\n<\/tr>\n
52<\/td>\nBibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Tracked Changes. Semiconductor devices. Mechanical and climatic test methods – Ionizing radiation (total dose)<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
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