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BSI 23/30468947 DC 2023

BSI 23/30468947 DC 2023

$13.70

BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods

Published By Publication Date Number of Pages
BSI 2023 44
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PDF Catalog

PDF Pages PDF Title
1 30468947-NC.pdf
3 49_1406e_CD.pdf
8 FOREWORD
10 INTRODUCTION
11 1 Scope
2 Normative references
3 Terms and definitions
3.1 Single crystals for SAW wafer
12 3.2 Terms and definitions related to LN and LT crystals
3.3 Terms and definitions related to all crystals
13 3.4 Flatness
15 3.5 Definitions of appearance defects
16 3.6 Other terms and definitions
17 4 Requirements
4.1 Material specification
4.1.1 Synthetic quartz crystal
4.1.2 LN
4.1.3 LT
4.1.4 LBO, LGS
18 4.2 Wafer specifications
4.2.1 General
4.2.2 Diameters and tolerances
4.2.3 Thickness and tolerance
4.2.4 Orientation flat
4.2.5 Secondary flat
19 4.2.6 Back surface roughness
4.2.7 Warp
4.2.8 TV5, TTV
20 4.2.9 LTV, PLTV
4.2.10 Front (propagation) surface finish
4.2.11 Front surface defects
4.2.12 Surface orientation tolerance
4.2.13 Inclusions
4.2.14 Etch channel number and position of seed for quartz wafer
21 4.2.15 Bevel
4.2.16 Curie temperature and tolerance
4.2.17 Lattice constant
4.2.18 Bulk resistivity (conductivity) for reduced LN and LT
4.2.19 Transmittance
4.2.20 Lightness
4.2.21 Colour difference
5 Sampling plan
5.1 General
22 5.2 Sampling
5.3 Sampling frequency
5.4 Inspection of whole population
6 Test methods
6.1 Diameter
6.2 Thickness
6.3 Dimension of OF
6.4 Orientation of OF
23 6.5 TV5
6.6 Warp
6.7 TTV, LTV and PLTV
6.8 Front surface defects
6.9 Inclusions
6.10 Back surface roughness
6.11 Orientation
6.12 Curie temperature
6.13 Lattice constant
6.14 Bulk resistivity
6.15 Transmittance
6.16 Lightness
6.17 Colour difference
7 Identification, labelling, packaging, delivery condition
7.1 Packaging
7.2 Labelling and identification
24 7.3 Delivery condition
8 Measurement of Curie temperature
8.1 General
8.2 DTA method
8.3 Dielectric constant method
25 9 Measurement of lattice constant (Bond method)
26 10 Measurement of face angle by X-ray
10.1 Measurement principle
27 10.2 Measurement method
10.3 Measuring surface orientation of wafer
10.4 Measuring OF flat orientation
10.5 Typical wafer orientations and reference planes
28 11 Measurement of bulk resistivity
11.1 Resistance measurement of a wafer
11.2 Electrode
29 11.3 Bulk resistivity
12 Visual inspections – Front surface inspection method
30 13 Measurement of thickness and thickness variation
13.1 Measurement principle
13.1.1 Contact measurement
13.1.2 Contactless measurement
13.2 Sample
13.3 Measurement method
13.3.1 Contact measurement
13.3.2 Contactless measurement
13.3.2.1 Contactless point measurement
13.3.2.2 Contactless area scanning measurement
31 14 Measurement of transmittance
14.1 Measurement principle
14.2 Sample
14.3 Measurement method
15 Measurement of lightness and colour difference
15.1 Measurement principle
15.2 Sample
15.3 Measurement method
33 Annex A (normative) Expression using Euler angle description for piezoelectric single crystals
36 Annex B (informative) Manufacturing process for SAW wafers
B.1 Crystal growth methods
B.1.1 Czochralski growth method
38 B.1.2 Vertical Bridgman method
39 B.2 Standard mechanical wafer manufacturing
B.2.1 Process flow-chart
40 B.2.2 Cutting both ends and cylindrical grinding
B.2.3 Marking orientation
B.2.4 Slicing
41 B.2.5 Double-sided lapping
B.2.6 Bevelling (edge rounding)
B.2.7 Mirror polishing
42 Annex C (informative) Measurement principle of lightness and colour difference
43 Bibliography

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BSI 23/30468947 DC 2023
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