BS EN IEC 63287-1:2021
$189.07
Semiconductor devices. Generic semiconductor qualification guidelines – Guidelines for IC reliability qualification
Published By | Publication Date | Number of Pages |
BSI | 2021 | 50 |
PDF Catalog
PDF Pages | PDF Title |
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2 | undefined |
5 | Annex ZA(normative)Normative references to international publicationswith their corresponding European publications |
7 | English CONTENTS |
9 | FOREWORD |
11 | INTRODUCTION |
12 | 1 Scope 2 Normative references |
13 | 3 Terms and definitions 4 Product categories and applications |
14 | 5 Failure 5.1 Failure distribution Tables Table 1 – Examples of product categories |
15 | 5.2 Early failure 5.2.1 Description Figures Figure 1 – Bathtub curve |
16 | 5.2.2 Early failure rate Figure 2 – Failure process of IC manufacturing lotsduring the early failure period |
17 | Figure 3 – Weibull conceptual diagram of the early failure rate |
19 | Figure 4 – Example of a failure ratio: α (in hundreds)and the number of failures for CL of 60 % |
20 | 5.2.3 Screening |
21 | Figure 5 – Screening and estimated early fail rate in Weibull diagram |
22 | 5.3 Random failure 5.3.1 Description Figure 6 – Bathtub curve setting the point immediately after production as the origin Figure 7 – Bathtub curve setting the point after screening as the origin |
23 | 5.3.2 Mean failure rate Figure 8 – Conceptual diagram of calculation method for the meanfailure rate from the exponential distribution |
24 | Figure 9 – Conceptual diagram of calculation method forthe mean failure rate as an extension of early failure |
26 | 5.4 Wear-out failure 5.4.1 Description 5.4.2 Wear-out failure rate Figure 10 – Conceptual diagram of the wear-out failure |
27 | Figure 11 – Conceptual diagram describingthe concept of the acceleration test |
29 | 6 Reliability test 6.1 Reliability test description 6.2 Reliability test plan 6.2.1 Procedures for creating a reliability test plan |
31 | Figure 12 – Concept of the reliability testin a Weibull diagram (based on sample size) Table 2 – Cumulative failure probability 0,1 % over 10 years [×10–6]for the third, fifth and seventh years |
32 | 6.2.2 Estimation of the test time required to confirm the TDDB from the number of test samples |
33 | 6.2.3 Estimation of the number of samples required to confirm the TDDB from the test time |
34 | 6.3 Reliability test methods Figure 13 – Concept of the reliability test in a Weibull diagram (based on test time) |
35 | Figure 14 – Difference in sampling sizes according to the m value (image) |
36 | Table 3 – Major reliability (life) test methods and purposes |
37 | Table 4 – Examples of the number of test samples and the test timein typical reliability (life) test methods |
38 | 6.4 Acceleration models for reliability tests 6.4.1 Arrhenius model 6.4.2 V-model 6.4.3 Absolute water vapor pressure model 6.4.4 Coffin-Manson model |
39 | 6.5 Concept of family 6.5.1 General 6.5.2 Conducting life test using family Table 5 – Concept of family (example) |
41 | Table 6 – Concept of difference/failure mechanism/corresponding test item (examples) |
42 | 6.5.3 Verification of early failure rate using family Figure 15 – How the screening defect rate is seen dependingon the difference of chip size (example) |
43 | Table 7 – Factors for calculation examples of early failure rate using family data |
44 | 7 Stress test methods Table 8 – LTPD sampling table for acceptance number Ac = 0 Table 9 – Major reliability (strength) test methods and purposes |
45 | 8 Supplementary tests 9 Summary table of assumptions Table 10 – Supplementary tests |
46 | Table 11 – Accelerating factors, calculation formulae and numerical valuesa |
47 | 10 Summary |
48 | Bibliography |